Q0
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© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 1 1Publication Order Number:
NGTB20N120IHW/D
NGTB20N120IHWG
IGBT - Induction Cooking
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides and
superior performance in demanding switching applications, and offers
low on−state voltage with minimal switching loss. The IGBT is well
suited for resonant or soft switching applications.
Features
•Extremely Efficient Trench with Fieldstop Technology
•Low Switching Loss Reduces System Power Dissipation
•Optimized for Low Losses in IH Cooker Application
•This is a Pb−Free Device
Typical Applications
•Inductive Heating
•Consumer Appliances
•Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage @ TJ = 25°C VCES 1200 V
Collector current
@ TC = 25°C
@ TC = 100°C
IC40
20
A
Pulsed collector current, Tpulse limited
by TJmax, 10 ms Pulse, VGE = 15 V ICM 80 A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF40
20
A
Diode pulsed current, Tpulse limited
by TJmax, 10 ms Pulse, VGE = 0 V IFM 80 A
Gate−emitter voltage
Transient Gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE $20
$25 V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD341
170
W
Operating junction temperature range TJ−40 to +175 °C
Storage temperature range Tstg −55 to +175 °C
Lead temperature for soldering, 1/8″
from case for 5 seconds TSLD 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
20 A, 1200 V
VCEsat = 2.20 V
Eoff = 0.48 mJ
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G
E
C
TO−247
CASE 340AL
Device Package Shipping
ORDERING INFORMATION
NGTB20N120IHWG TO−247
(Pb−Free)
30 Units / Rail
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
20N120IH
AYWWG
GCE
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NGTB20N120IHWG
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2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case RqJC 0.44 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited VGE = 0 V, IC = 500 mAV(BR)CES 1200 − − V
Collector−emitter saturation voltage VGE = 15 V, IC = 20 A
VGE = 15 V, IC = 20 A, TJ = 175°CVCEsat −
−2.20
2.30 2.65
−V
Gate−emitter threshold voltage VGE = VCE, IC = 250 mAVGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°CICES −
−−
−0.1
2.8 mA
Gate leakage current, collector−emitter
short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Cies − 3590 − pF
Output capacitance Coes − 90 −
Reverse transfer capacitance Cres − 70 −
Gate charge total
VCE = 600 V, IC = 20 A, VGE = 15 V
Qg− 150 − nC
Gate to emitter charge Qge − 31 −
Gate to collector charge Qgc − 67 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time TJ = 25°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
td(off) − 170 − ns
Fall time tf− 155 −
Turn−off switching loss Eoff − 0.48 − mJ
Turn−off delay time TJ = 150°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
td(off) − 185 − ns
Fall time tf− 210 −
Turn−off switching loss Eoff − 0.92 − mJ
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 20 A
VGE = 0 V, IF = 20 A, TJ = 175°CVF−
−2.2
3.8 2.75 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
\
150‘
: 25‘0
NGTB20N120IHWG
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3
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
86543210
0
10
20
30
40
50
60
Figure 3. Typical Transfer Characteristics Figure 4. Typical Capacitance
VGE, GATE−EMITTER VOLTAGE (V)
1050
0
10
20
30
40
50
60
Figure 5. Diode Forward Characteristics
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
7
VGE = 11 V
to 20 V
TJ = 25°C
9 V
8 V
7 V
8
6543210
0
10
20
30
40
50
60
IC, COLLECTOR CURRENT (A)
7
TJ = 150°C
9 V
8 V
7 V
TJ = 25°C
TJ = 150°C
VGE = 11 V
to 20 V
1234 6789
Figure 6. Typical Gate Charge
VCE, COLLECTOR−EMITTER VOLTAGE (V)
908050403020100
10
100
1000
10000
C, CAPACITANCE (pF)
10
0
Cies
Coes
Cres
7060
1TJ = 25°C
10 V 10 V
11
VF, FORWARD VOLTAGE (V)
3.02.52.01.51.00.50
70
I
F
, FORWARD CURRENT (A)
TJ = 25°C
TJ = 150°C
60
50
40
30
20
10
0
QG, GATE CHARGE (nC)
1801601201008060400
0
2
4
6
8
12
14
16
VGE, GATE−EMITTER VOLTAGE (V)
20
0
10
VCE = 600 V
VCE = 600 V
VGE = 15 V
IC = 20 A
3.5 4.0 4.5 5.0 20 140
dc aperatmn
Smg‘e Nanrepetmve
Pu‘se Tc : 25°C
Curves must be deraled
hnear‘y with mcrease
NGTB20N120IHWG
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4
TYPICAL CHARACTERISTICS
Figure 7. Switching Loss vs. Temperature Figure 8. Switching Time vs. Temperature
Figure 9. Safe Operating Area
TJ, JUNCTION TEMPERATURE (°C)
140120100806040200
0.8
SWITCHING LOSS (mJ)
160
VCE = 600 V
VGE = 15 V
IC = 20 A
Rg = 10 W
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Eoff
Figure 10. Reverse Bias Safe Operating Area
TJ, JUNCTION TEMPERATURE (°C)
140120100806040200
100
1000
SWITCHING TIME (ns)
160
VCE = 600 V
VGE = 15 V
IC = 20 A
Rg = 10 W
tf
td(off)
0.9
1.0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
1000100101
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
1
10
100
1000
VGE = 15 V, TC = 125°C
1000100101
10k 10k
Figure 11. IGBT Transient Thermal Impedance
ON−PULSE WIDTH (s)
10.10.010.00011E−06
1
SQUARE−WAVE PEAK R(t) (°C/W)
1E−05
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
RqJA = 0.44
Junction
C1C2
R1R2
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Case
Cn
Rn
0.1
0.01
0.001
0.0001 0.001
Ri (°C/W) Ci (J/°C)
0.08113
0.118279
0.115034
0.130170
0.001355
0.003898
0.008455
0.027490
0.076823
73.79876
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NGTB20N120IHWG
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7
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
E2
L1
D
L
b4
b2
b
E
0.25 MBA
M
c
A1
A
123
B
e
2X
3X
0.635 MBA
M
A
S
P
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
DIM MIN MAX
MILLIMETERS
D20.30 21.40
E15.50 16.25
A4.70 5.30
b1.00 1.40
b2 1.65 2.35
e5.45 BSC
A1 2.20 2.60
c0.40 0.80
L19.80 20.80
Q5.40 6.20
E2 4.32 5.49
L1 3.50 4.50
P3.55 3.65
S6.15 BSC
b4 2.60 3.40
NOTE 6
4
NOTE 7
Q
NOTE 4
NOTE 3
NOTE 5
E2/2
NOTE 4
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