onsemi 的 NSS1C201MZ4 規格書

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© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 4
1Publication Order Number:
NSS1C201MZ4/D
NSS1C201MZ4,
NSV1C201MZ4
100 V, 2.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector-Emitter Voltage VCEO 100 Vdc
Collector-Base Voltage VCBO 140 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Collector Current − Continuous IC2.0 A
Collector Current − Peak ICM 3.0 A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
800
6.5
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1) 155 °C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
2.0
15.6
W
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2) 64 °C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
710 mW
Junction and Storage
Temperature Range
TJ, Tstg −55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 7.6 mm2, 1 oz. copper traces.
2. FR−4 @ 645 mm2, 1 oz. copper traces.
3. Thermal response.
COLLECTOR
2,4
1
BASE
3
EMITTER
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100 VOLTS, 2.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
Device Package Shipping†
ORDERING INFORMATION
NSS1C201MZ4T1G
NSV1C201MZ4T1G
SOT−223
(Pb−Free)
1000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SOT−223
CASE 318E
STYLE 1
MARKING
DIAGRAM
Top View Pinout
C
CEB
4
123
1
1C201G
AYW
A = Assembly Location
Y = Year
W = Work Week
1C201 = Specific Device Code
G= Pb−Free Package
NSS1C201MZ4T3G SOT−223
(Pb−Free)
4000/
Tape & Reel
PIN ASSIGNMENT
NSS1C201MZ4, NSV1C201MZ4
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 100 Vdc
Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 140 Vdc
Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 7.0 Vdc
Collector Cutoff Current (VCB = 140 Vdc, IE = 0) ICBO 100 nA
Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO 50 nA
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
150
120
80
40
360
Collector−Emitter Saturation Voltage (Note 4)
(IC = 0.1 A, IB = 0.010 A)
(IC = 0.5 A, IB = 0.050 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
VCE(sat)
0.030
0.060
0.100
0.180
V
Base −Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 0.100 A)
VBE(sat)
1.10
V
Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) VBE(on) 0.850 V
Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT100 MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo 305 pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo 22 pF
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
Figure 1. Power Derating
T, TEMPERATURE (°C)
150125100755025
0
0.5
1.0
1.5
2.0
2.5
PD, POWER DISSIPATION (W)
TC
TA
NSS1C201MZ4, NSV1C201MZ4
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3
TYPICAL CHARACTERISTICS
Figure 2. DC Current Gain
0
40
80
120
160
200
240
280
320
360
400
0.001 0.01 0.1 1 10
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (A)
hRE, DC CURRENT GAIN
150°C
25°C
−55°C
VCE = 2 V
0
40
80
120
160
200
240
280
320
360
400
0.001 0.01 0.1 1 10
hRE, DC CURRENT GAIN
Figure 4. Collector−Emitter Saturation Voltage
IC, COLLECTOR CURRENT (A)
150°C
25°C
−55°C
VCE = 4 V
0.01
0.1
1
0.001 0.01 0.1 1 10
150°C
−55°C
25°C
VBE(sat), COLLECTOR−EMITTER
SATURATOIN VOLTAGE (V)
Figure 5. Collector−Emitter Saturation Voltage
IC, COLLECTOR CURRENT (A)
IC /IB = 10
0.01
0.1
1
0.001 0.01 0.1 1 10
25°C
−55°C
150°C
IC /IB = 20
VCE(sat), COLLECTOR−EMITTER
SATURATOIN VOLTAGE (V)
Figure 6. Base−Emitter Saturation Voltage
IC, COLLECTOR CURRENT (A)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001 0.01 0.1 1 10
Figure 7. Base−Emitter Saturation Voltage
IC, COLLECTOR CURRENT (A)
VBE(sat), BASE−EMITTER SATUR-
ATOIN VOLTAGE (V)
IC /IB = 10
25°C
150°C
−55°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
VBE(sat), BASE−EMITTER SATUR-
ATOIN VOLTAGE (V)
IC /IB = 50
25°C
150°C
−55°C
\ \ 345%: \ ITEST : 1 MHz ’
NSS1C201MZ4, NSV1C201MZ4
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4
TYPICAL CHARACTERISTICS
Figure 8. Base−Emitter Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.01 0.1 1 10
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (A)
VBE(on), BASE−EMITTER VOLTAGE
(V)
150°C
25°C
−55°C
VCE = 2 V
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1
VCE(sat), COLLECTOR−EMITTER
SATURATOIN VOLTAGE (V)
Figure 10. Input Capacitance
IB, BASE CURRENT (A)
TJ = 25°C
IC = 0.1 A
0.5 A
1 A
2 A
3 A
0
50
100
150
200
250
300
350
400
012345678
CIB, INPUT CAPACITANCE (pF)
Figure 11. Output Capacitance
VEB, BASE−EMITTER VOLTAGE (V)
TJ = 25°C
fTEST = 1 MHz
0
5
10
15
20
25
30
35
40
45
50
0 102030405060708090100
COB, OUTPUT CAPACITANCE (pF)
Figure 12. Current Gain Bandwidth Product
VCB, COLLECTOR BASE VOLTAGE (V)
TJ = 25°C
fTEST = 1 MHz
0
20
40
60
80
100
120
0.001 0.01 0.1 1 10
fTau, CURRENT GAIN BANDWIDTH
(MHz)
Figure 13. Safe Operating Area
IC, COLLECTOR CURRENT (A)
TJ = 25°C
fTEST = 1 MHz
VCE = 5 V
VCE, COLLECTOR EMITTER VOLTAGE (V)
100101
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
TJ = 25°C
1 mS
0.5 mS
100 mS
10 mS
‘ ‘ T a EU a 75 U as U U24 0 mm D U35 2% 303 :20 ans am we ‘ ‘aHe m 029 U35 anus amz am 5 an 5 so 5 m u 245 a 255 u m a }. all: 350 370 mu mas ma 2 2n 2 an 2 w u m 0 am a mu mas ago H15 u m 0037 u an i r/4 K. ] 57m 700 730 am 0276 uza7 0* ¢ W J
NSS1C201MZ4, NSV1C201MZ4
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5
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
− −
e1
0°10°0°10°
q
q
L
L0.20 −−− −−− 0.008 −−− −−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSS1C201MZ4/D
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