MDmesh™ V Power MOSFETs

STMicroelectronics' MDmesh™ V Power MOSFET portfolio offers a broad range of breakdown voltages from -500 V to 1500 V, with low gate charge and low on-resistance, combined with state-of-the-art packaging. STMicroelectronics' process technology for both high-voltage and low-voltage MOSFETs has enhanced power handling capability, resulting in high-efficiency solutions.

Features

• -500 V to 1500 V breakdown voltage range
• World's best RDS_(on) area for 650 V power MOSFETs (0.029 Ω in the TO-247 package)
• Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements
• Intrinsic, fast body diode option for select product lines

In each voltage range, supporting applications such as point of load, telecom DC-DC converters, PFC switch mode power supplies, and automotive equipment, STMicroelectronics has the right MOSFET for your design.