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- Cree 的功率和 RF 事業群現在稱為 Wolfspeed,屬於 Cree 的公司之一。Wolfspeed 能讓功率和無線系統擺脫矽晶的限制,採用碳化矽和氮化鎵架構引領新一代系統的創新與商業化。
C3M™ Planar MOSFET Technology
Wolfspeed’s advanced SiC MOSFET technology is offered in low-inductance discrete packing, allowing engineers to take advantage of C3M™ planar MOSFET chips.
G5 Z-Rec® SiC 肖特基二極體
Cree Wolfspeed 的 C5D 1700 V Z-Rec® 肖特基二極體產品旨在協助提高系統效率。
CMPA5585030F 30 W GaN MMIC Power Amplifier
Wolfspeed’s CMPA5585030F 30 W GaN MMIC power amplifier comes in a 10-lead metal/ceramic flanged package for optimal electrical and thermal performance.
C3M0065090J 900 V SiC MOSFET
Wolfspeed 的 C3M0065090J 900 V MOSFET 能促成更小型且更高效率的新一代電源轉換系統,成本可媲美矽架構解決方案。
CGH27015 氮化鎵 (GaN) 高電子遷移率電晶體 (HEMT)
Wolfspeed 的 CGH27015 GaN HEMT,專為高效率、高增益,以及寬廣的頻寬能力放大器應用所設計。
CGHV40050F 50 V GaN 電晶體
Wolfspeed 的 CGHV40050 以 50 V 電源軌運行,為眾多 RF 及微波應用提供一般用途的寬頻解決方案。
Second-Generation C2M1000170D Silicon Carbide MOSFET
Duration: 5 minutes
Wolfspeed's Gen2 1700 V SiC MOSFET can reduce system cost while improving the reliability.
SiC Schottky Diodes in Non-Isolated LED Drivers
C3D1P7060Q diode has zero reverse recovery energy resulting in higher system efficiency, lower system temp, lower EMI emissions, and increased reliability.
SiC Diodes in Inverter Modules
Duration: 15 minutes
Wolfspeed’s Silicon Carbide (SiC) diodes and the benefits they provide when implemented into power inverter applications.
SiC Schottky Diodes
Active Power Factor Correction (PFC) basics, SiC Schottky selection guide, and design considerations.
Think Like Cree, Episode 1: Everett Bradford, R&D Engineer
There are robots, and then there are rope-bots. Watch as Cree’s own engineer, Everett, tests to see if the latter can cut it…out of a tall tree.
發佈日期:2019-02-18
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture
發佈日期:2018-04-26
See Cree's Gallium Nitride (GaN) transistors and MMICs for X-Band radar power amplifiers
發佈日期:2016-07-08
Using SiC Devices to Improve an LED Driver
We step into Cree's lab where Adam shows some examples of Cree reference designs demonstrating how SiC can achieve high power density.
發佈日期:2016-06-22