AEM Central Semiconductor

Gallium Nitride (GaN) N-Channel FETs

Central Semiconductor’s FETs are designed for soft-switching applications with high efficiency standards

Image of Central Semiconductor Gallium Nitride (GaN) N-Channel FETsCentral Semiconductor's GaN N-Channel FETs combine high voltage capability with low RDS(ON) and are designed for soft-switching applications with high efficiency standards. The space-saving DFN and chip scale packaging are ideal for application in high-power wireless charging, power factor correction (PFC), and electric vehicle inverters. These GaN FETs are offered in a 100 V model that supports 60 A or a 650 V that supports 11 A or 17 A. The 40 V option supports 20 A or 50 A and bare dies are available upon demand.

Features

  • High voltage capability
  • Low gate charge
  • RDS(ON) as low as 3.2 mΩ
  • Efficient fast switching

Gallium Nitride (GaN) N-Channel FETs

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
650V, 11A, N-CHANNEL GAN FET INCDF56G6511N TR13 PBFREE650V, 11A, N-CHANNEL GAN FET IN2297 - Immediate$160.00View Details
650V, 17A, N-CHANNEL GAN FET INCDF56G6517N TR13 PBFREE650V, 17A, N-CHANNEL GAN FET IN2498 - Immediate$184.00View Details
100V, 60A, N-CHANNEL CHIP SCALECCSPG1060N TR PBFREE100V, 60A, N-CHANNEL CHIP SCALE1429 - Immediate$183.00View Details
Published: 2023-12-19