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3rd Generation Trench-Type SiC MOSFETs
ROHM's original design delivers high withstand voltage with low ON-resistance and fast switching speeds
ROHM’s 3rd generation SiC MOSFETs utilize a proprietary trench gate structure that reduces ON-resistance by 50% and input capacitance by 35% compared with existing planar-type SiC MOSFETs. This translates to significantly lower switching loss and faster switching speeds, improving efficiency while reducing power loss in a variety of equipment.
Key Advantages
- Lower ON-resistance improves inverter power density
- Supports high-speed switching
- Minimal reverse recovery behavior of the parasitic diode
- Small Qg and parasitic capacitance
- Eliminates degradation caused by parasitic diode conduction
- Compatible with high-temperature operation (Tjmax=175°C)
3rd Generation Trench-Type SiC MOSFETs
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | SCT3022ALGC11 | SICFET N-CH 650V 93A TO247N | 200 - Immediate | $1,659.00 | View Details |
| | SCT3030ALGC11 | SICFET N-CH 650V 70A TO247N | 880 - Immediate | $1,027.00 | View Details |
| | SCT3060ALGC11 | SICFET N-CH 650V 39A TO247N | 990 - Immediate | $556.00 | View Details |
| | SCT3120ALGC11 | SICFET N-CH 650V 21A TO247N | 282 - Immediate | $310.00 | View Details |
| | SCT3030KLGC11 | SICFET N-CH 1200V 72A TO247N | 253 - Immediate | $2,497.00 | View Details |
| | SCT3040KLGC11 | SICFET N-CH 1200V 55A TO247N | 387 - Immediate | $1,376.00 | View Details |
| | SCT3080KLGC11 | SICFET N-CH 1200V 31A TO247N | 450 - Immediate | $799.00 | View Details |
| | SCT3160KLGC11 | SICFET N-CH 1200V 17A TO247N | 0 - Immediate | $327.00 | View Details |
Published: 2016-08-15
Taiwan