


BSDH06G65E2 | |
|---|---|
DigiKey Part Number | 118-BSDH06G65E2-ND |
Manufacturer | |
Manufacturer Product Number | BSDH06G65E2 |
Description | DIODE SIL CARBIDE 650V 6A TO220 |
Manufacturer Standard Lead Time | 27 Weeks |
Customer Reference | |
Detailed Description | Diode 650 V 6A Through Hole TO-220-2 |
Datasheet | Datasheet |
Category | Speed Zero Recovery Time > 500mA (Io) |
Mfr | Reverse Recovery Time (trr) 0 ns |
Series | Current - Reverse Leakage @ Vr 30 µA @ 650 V |
Packaging Tube | Capacitance @ Vr, F 201pF @ 1V, 1MHz |
Part Status Active | Mounting Type |
Technology | Package / Case |
Voltage - DC Reverse (Vr) (Max) 650 V | Supplier Device Package TO-220-2 |
Current - Average Rectified (Io) 6A | Operating Temperature - Junction -55°C ~ 175°C |
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A | Base Product Number |
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| IDH06G65C5XKSA2 | Infineon Technologies | 621 | 448-IDH06G65C5XKSA2-ND | NT$123.00000 | Parametric Equivalent |
| UJ3D06506TS | onsemi | 56,044 | 5556-UJ3D06506TS-ND | NT$137.00000 | Parametric Equivalent |
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | NT$110.00000 | NT$110 |
| 50 | NT$54.44000 | NT$2,722 |
| 100 | NT$49.11000 | NT$4,911 |
| 500 | NT$39.75200 | NT$19,876 |
| 1,000 | NT$36.74600 | NT$36,746 |
| 2,000 | NT$34.22000 | NT$68,440 |
| 5,000 | NT$31.48740 | NT$157,437 |
| 10,000 | NT$31.11930 | NT$311,193 |

