Name: DMN10H220LE-13
Brand: Diodes Incorporated
SKU: DMN10H220LE-13DITR-ND
Price: 36 TWD
Availability: OutOfStock

DMN10H220LE-13 is out of stock and can be placed on backorder.

Available Substitutes:

Similar

Infineon Technologies

In Stock: 45,322

Unit Price: NT$40.00000

Similar

Infineon Technologies

In Stock: 3,115

Unit Price: NT$36.00000

Similar

onsemi

In Stock: 0

Unit Price: NT$0.00000

Similar

Infineon Technologies

In Stock: 10,532

Unit Price: NT$35.00000

Similar

Panjit International Inc.

In Stock: 0

Unit Price: NT$6.82520

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

DMN10H220LE-13
DigiKey Part Number	DMN10H220LE-13DITR-ND - Tape & Reel (TR) DMN10H220LE-13DICT-ND - Cut Tape (CT) DMN10H220LE-13DIDKR-ND - Digi-Reel®
Manufacturer	Diodes Incorporated
Manufacturer Product Number	DMN10H220LE-13
Description	MOSFET N-CH 100V 2.3A SOT223
Manufacturer Standard Lead Time	40 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 2.3A (Ta) 1.8W (Ta) Surface Mount SOT-223-3
Datasheet	Datasheet
EDA/CAD Models	DMN10H220LE-13 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Diodes Incorporated
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	401 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-3
Package / Case	TO-261-4, TO-261AA
Base Product Number	DMN10