Name: GC20N65F
Brand: Goford Semiconductor
SKU: 3141-GC20N65F-ND
Price: 123 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GC20N65F
DigiKey Part Number	3141-GC20N65F-ND
Manufacturer	Goford Semiconductor
Manufacturer Product Number	GC20N65F
Description	N650V,RD(MAX)<170M@10V,VTH2.5V~4
Manufacturer Standard Lead Time	8 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 20A (Tc) 40W (Tc) Through Hole TO-220F
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Goford Semiconductor
Series	SuperJunction
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1603 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220F
Package / Case	TO-220-3 Full Pack