Name: GT042P06T
Brand: Goford Semiconductor
SKU: 3141-GT042P06T-ND
Price: 145 TWD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GT042P06T
DigiKey Part Number	3141-GT042P06T-ND
Manufacturer	Goford Semiconductor
Manufacturer Product Number	GT042P06T
Description	MOSFET, P-CH,-60V,-160A,RD(MAX)<
Manufacturer Standard Lead Time	8 Weeks
Customer Reference
Detailed Description	P-Channel 60 V 160A (Tc) 280W (Tc) Through Hole TO-220
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Goford Semiconductor
Series	SGT
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	305 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9151 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	280W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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