Name: BSZ900N20NS3GATMA1
Brand: Infineon Technologies
SKU: BSZ900N20NS3GATMA1TR-ND
Price: 75 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BSZ900N20NS3GATMA1
DigiKey Part Number	BSZ900N20NS3GATMA1TR-ND - Tape & Reel (TR) BSZ900N20NS3GATMA1CT-ND - Cut Tape (CT) BSZ900N20NS3GATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	BSZ900N20NS3GATMA1
Description	MOSFET N-CH 200V 15.2A 8TSDSON
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 200 V 15.2A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8
Datasheet	Datasheet
EDA/CAD Models	BSZ900N20NS3GATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 30µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 11.6 nC @ 10 V
Series OptiMOS™	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 100 V
Part Status Active	Power Dissipation (Max) 62.5W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 200 V	Supplier Device Package PG-TSDSON-8
Current - Continuous Drain (Id) @ 25°C 15.2A (Tc)	Package / Case 8-PowerTDFN
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number BSZ900
Rds On (Max) @ Id, Vgs 90mOhm @ 7.6A, 10V