Name: IMDQ65R015M2HXUMA1
Brand: Infineon Technologies
SKU: 448-IMDQ65R015M2HXUMA1TR-ND
Price: 536 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMDQ65R015M2HXUMA1
DigiKey Part Number	448-IMDQ65R015M2HXUMA1TR-ND - Tape & Reel (TR) 448-IMDQ65R015M2HXUMA1CT-ND - Cut Tape (CT) 448-IMDQ65R015M2HXUMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMDQ65R015M2HXUMA1
Description	IMDQ65R015M2HXUMA1
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 94A (Tc) 499W (Tc) Surface Mount PG-HDSOP-22-1
Datasheet	Datasheet
EDA/CAD Models	IMDQ65R015M2HXUMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
Rds On (Max) @ Id, Vgs	13.2mOhm @ 64.2A, 20V
Vgs(th) (Max) @ Id	5.6V @ 13mA
Gate Charge (Qg) (Max) @ Vgs	79 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	2792 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	499W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-HDSOP-22-1
Package / Case	22-PowerBSOP Module