Name: IMW120R090M1HXKSA1
Brand: Infineon Technologies
SKU: IMW120R090M1HXKSA1-ND
Price: 379 TWD
Availability: InStock

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IMW120R090M1HXKSA1
DigiKey Part Number	IMW120R090M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMW120R090M1HXKSA1
Description	SICFET N-CH 1.2KV 26A TO247-3
Manufacturer Standard Lead Time	54 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-3-41
Datasheet	Datasheet
EDA/CAD Models	IMW120R090M1HXKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5.7V @ 3.7mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 21 nC @ 18 V
Series CoolSiC™	Vgs (Max) +23V, -7V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 800 V
Part Status Active	Power Dissipation (Max) 115W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 1200 V	Supplier Device Package PG-TO247-3-41
Current - Continuous Drain (Id) @ 25°C 26A (Tc)	Package / Case TO-247-3
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Base Product Number IMW120
Rds On (Max) @ Id, Vgs 117mOhm @ 8.5A, 18V