Name: IMW65R083M1HXKSA1
Brand: Infineon Technologies
SKU: 448-IMW65R083M1HXKSA1-ND
Price: 323 TWD
Availability: InStock

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IMW65R083M1HXKSA1
DigiKey Part Number	448-IMW65R083M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMW65R083M1HXKSA1
Description	SILICON CARBIDE MOSFET, PG-TO247
Customer Reference
Detailed Description	N-Channel 650 V 24A (Tc) 104W (Tc) Through Hole PG-TO247-3-41
Datasheet	Datasheet
EDA/CAD Models	IMW65R083M1HXKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5.7V @ 3.3mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 19 nC @ 18 V
Series CoolSiC™	Vgs (Max) +20V, -2V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 624 pF @ 400 V
Part Status Not For New Designs	Power Dissipation (Max) 104W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package PG-TO247-3-41
Current - Continuous Drain (Id) @ 25°C 24A (Tc)	Package / Case TO-247-3
Drive Voltage (Max Rds On, Min Rds On) 18V	Base Product Number IMW65R
Rds On (Max) @ Id, Vgs 111mOhm @ 11.2A, 18V