Name: IPB65R110CFDAATMA1
Brand: Infineon Technologies
SKU: IPB65R110CFDAATMA1TR-ND
Price: 290 TWD
Availability: InStock

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IPB65R110CFDAATMA1
DigiKey Part Number	IPB65R110CFDAATMA1TR-ND - Tape & Reel (TR) IPB65R110CFDAATMA1CT-ND - Cut Tape (CT) IPB65R110CFDAATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPB65R110CFDAATMA1
Description	MOSFET N-CH 650V 31.2A D2PAK
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Surface Mount PG-TO263-3
Datasheet	Datasheet
EDA/CAD Models	IPB65R110CFDAATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Mfr Infineon Technologies	Vgs (Max) ±20V
Series CoolMOS™	Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 277.8W (Tc)
Part Status Active	Operating Temperature -40°C ~ 150°C (TJ)
FET Type N-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 650 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)	Supplier Device Package PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V	Base Product Number IPB65R110
Vgs(th) (Max) @ Id 4.5V @ 1.3mA