Name: IPD110N12N3GATMA1
Brand: Infineon Technologies
SKU: IPD110N12N3GATMA1TR-ND
Price: 102 TWD
Availability: InStock

IPD110N12N3GATMA1
DigiKey Part Number	IPD110N12N3GATMA1TR-ND - Tape & Reel (TR) IPD110N12N3GATMA1CT-ND - Cut Tape (CT) IPD110N12N3GATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPD110N12N3GATMA1
Description	MOSFET N-CH 120V 75A TO252-3
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 120 V 75A (Tc) 136W (Tc) Surface Mount PG-TO252-3
Datasheet	Datasheet
EDA/CAD Models	IPD110N12N3GATMA1 Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	3V @ 83µA (Typ)
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4310 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	IPD110

IPD110N12N3GATMA1