Name: IPD33CN10NGATMA1
Brand: Infineon Technologies
SKU: IPD33CN10NGATMA1TR-ND
Price: 56 TWD
Availability: InStock

IPD33CN10NGATMA1
DigiKey Part Number	IPD33CN10NGATMA1TR-ND - Tape & Reel (TR) IPD33CN10NGATMA1CT-ND - Cut Tape (CT) IPD33CN10NGATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPD33CN10NGATMA1
Description	MOSFET N-CH 100V 27A TO252-3
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 27A (Tc) 58W (Tc) Surface Mount PG-TO252-3
Datasheet	Datasheet
EDA/CAD Models	IPD33CN10NGATMA1 Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	33mOhm @ 27A, 10V
Vgs(th) (Max) @ Id	4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1570 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	58W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	IPD33CN10

IPD33CN10NGATMA1