Name: IPD60R280P7SAUMA1
Brand: Infineon Technologies
SKU: IPD60R280P7SAUMA1TR-ND
Price: 57 TWD
Availability: OutOfStock

IPD60R280P7SAUMA1 is out of stock and can be placed on backorder.

Available Substitutes:

Similar

Rohm Semiconductor

In Stock: 2,145

Unit Price: NT$92.00000

Similar

Toshiba Semiconductor and Storage

In Stock: 0

Unit Price: NT$114.00000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPD60R280P7SAUMA1
DigiKey Part Number	IPD60R280P7SAUMA1TR-ND - Tape & Reel (TR) IPD60R280P7SAUMA1CT-ND - Cut Tape (CT) IPD60R280P7SAUMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPD60R280P7SAUMA1
Description	MOSFET N-CH 600V 12A TO252-3
Manufacturer Standard Lead Time	35 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 12A (Tc) 53W (Tc) Surface Mount PG-TO252-3
Datasheet	Datasheet
EDA/CAD Models	IPD60R280P7SAUMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	280mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	761 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	53W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	IPD60R