Name: IPP086N10N3GXKSA1
Brand: Infineon Technologies
SKU: 448-IPP086N10N3GXKSA1-ND
Price: 93 TWD
Availability: OutOfStock

IPP086N10N3GXKSA1
DigiKey Part Number	448-IPP086N10N3GXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPP086N10N3GXKSA1
Description	MOSFET N-CH 100V 80A TO220-3
Manufacturer Standard Lead Time	27 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3
Datasheet	Datasheet
EDA/CAD Models	IPP086N10N3GXKSA1 Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Base Product Number	IPP086

IPP086N10N3GXKSA1