Name: IRFB3306PBFXKMA1
Brand: Infineon Technologies
SKU: 448-IRFB3306PBFXKMA1-ND
Price: 80 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRFB3306PBFXKMA1
DigiKey Part Number	448-IRFB3306PBFXKMA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRFB3306PBFXKMA1
Description	TRENCH 40<-<100V
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 120A (Tc) 230W (Tc) Through Hole PG-TO220-3-904
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 1.037mA
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4520 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-904
Package / Case	TO-220-3

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In-Stock: 1,000

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Tube