Name: IXTP1R6N100D2
Brand: IXYS
SKU: 238-IXTP1R6N100D2-ND
Price: 150 TWD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXTP1R6N100D2
DigiKey Part Number	238-IXTP1R6N100D2-ND
Manufacturer	IXYS
Manufacturer Product Number	IXTP1R6N100D2
Description	MOSFET N-CH 1000V 1.6A TO220AB
Manufacturer Standard Lead Time	50 Weeks
Customer Reference
Detailed Description	N-Channel, Depletion Mode 1000 V 1.6A (Tc) 100W (Tc) Through Hole TO-220-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	IXYS
Series	Depletion
Packaging	Tube
Part Status	Active
FET Type	N-Channel, Depletion Mode
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	645 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Base Product Number	IXTP1