Bipolar (BJT) Transistor PNP 250 V 17 A 30MHz 130 W Through Hole TO-3P
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2SA1962OTU

DigiKey Part Number
2SA1962OTU-ND
Manufacturer
Manufacturer Product Number
2SA1962OTU
Description
TRANS PNP 250V 17A TO-3P
Customer Reference
Detailed Description
Bipolar (BJT) Transistor PNP 250 V 17 A 30MHz 130 W Through Hole TO-3P
Datasheet
 Datasheet
EDA/CAD Models
2SA1962OTU Models
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A, 5V
Mfr
Power - Max
130 W
Packaging
Tube
Frequency - Transition
30MHz
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
17 A
Package / Case
TO-3P-3, SC-65-3
Voltage - Collector Emitter Breakdown (Max)
250 V
Supplier Device Package
TO-3P
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Base Product Number
Current - Collector Cutoff (Max)
5µA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (2)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
NJW0302Gonsemi778NJW0302GOS-NDNT$145.00000MFR Recommended
2SA1962-O(Q)Toshiba Semiconductor and Storage02SA1962-OQ-NDNT$0.00000Similar
In-Stock: 343
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This product is no longer manufactured and will no longer be stocked once stock is depleted. View Substitutes
All prices are in TWD
Tube
QuantityUnit PriceExt Price
1NT$201.00000NT$201
30NT$113.03333NT$3,391
120NT$93.59167NT$11,231
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.