J113RL1
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DTD113E

DigiKey Part Number
2156-DTD113E-ND
Manufacturer
Manufacturer Product Number
DTD113E
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Customer Reference
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 350 mW Through Hole TO-92 (TO-226)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Manufacturer
onsemi
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistors Included
R1 and R2
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Power - Max
350 mW
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92 (TO-226)
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In-Stock: 25,000
Non-Cancelable/Non-Returnable
MARKETPLACE PRODUCT
Will ship in approximately 10 days from Rochester Electronics LLC
A separate NT$2,947 flat rate shipping fee will apply
All prices are in TWD
Bulk
QuantityUnit PriceExt Price
7,869NT$1.22798NT$9,663