Name: MJD112-1G
Brand: onsemi
SKU: MJD112-1GOS-ND
Price: 58 TWD
Availability: InStock

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MJD112-1G
DigiKey Part Number	MJD112-1GOS-ND
Manufacturer	onsemi
Manufacturer Product Number	MJD112-1G
Description	TRANS NPN DARL 100V 2A IPAK
Manufacturer Standard Lead Time	23 Weeks
Customer Reference
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole IPAK
Datasheet	Datasheet
EDA/CAD Models	MJD112-1G Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors
Mfr	onsemi
Series	-
Packaging	Tube
Part Status	Active
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Current - Collector Cutoff (Max)	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V
Power - Max	1.75 W
Frequency - Transition	25MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package	IPAK
Base Product Number	MJD112

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Tube