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Bipolar (BJT) Transistor PNP 300 V 500 mA 20 W Through Hole TO-126
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJE350G

DigiKey Part Number
MJE350GOS-ND
Manufacturer
Manufacturer Product Number
MJE350G
Description
TRANS PNP 300V 0.5A TO-126
Manufacturer Standard Lead Time
21 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor PNP 300 V 500 mA 20 W Through Hole TO-126
Datasheet
 Datasheet
EDA/CAD Models
MJE350G Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
300 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA, 10V
Power - Max
20 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Base Product Number
Product Questions and Answers

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All prices are in TWD
Bulk
QuantityUnit PriceExt Price
1NT$49.00000NT$49
10NT$31.10000NT$311
100NT$20.58000NT$2,058
500NT$16.07200NT$8,036
1,000NT$14.62000NT$14,620
2,000NT$13.39900NT$26,798
5,000NT$12.07660NT$60,383
10,000NT$11.25980NT$112,598
Manufacturers Standard Package