Name: RBE111N10R1SZN2#HB0
Brand: Renesas Electronics Corporation
SKU: 559-RBE111N10R1SZN2#HB0TR-ND
Price: 59 TWD
Availability: OutOfStock

RBE111N10R1SZN2#HB0 is out of stock and can be placed on backorder.

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Parametric Equivalent

RBA40N10EANS-5UA11#HB0

Renesas Electronics Corporation

In Stock: 0

Unit Price: NT$64.00000

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RBE111N10R1SZN2#HB0
DigiKey Part Number	559-RBE111N10R1SZN2#HB0TR-ND - Tape & Reel (TR) 559-RBE111N10R1SZN2#HB0CT-ND - Cut Tape (CT) 559-RBE111N10R1SZN2#HB0DKR-ND - Digi-Reel®
Manufacturer	Renesas Electronics Corporation
Manufacturer Product Number	RBE111N10R1SZN2#HB0
Description	MOSFET N-CH 100V 40A SO8-FL
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 40A (Tc) 57W (Tc) Surface Mount, Wettable Flank μSO8-FL
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 28µA
Mfr Renesas Electronics Corporation	Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 50 V
FET Type N-Channel	Power Dissipation (Max) 57W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 100 V	Mounting Type Surface Mount, Wettable Flank
Current - Continuous Drain (Id) @ 25°C 40A (Tc)	Supplier Device Package μSO8-FL
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case 8-PowerVDFN
Rds On (Max) @ Id, Vgs 11.1mOhm @ 20A, 10V