N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole HiP247™
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SCT30N120

DigiKey Part Number
497-14960-ND
Manufacturer
STMicroelectronics
Manufacturer Product Number
SCT30N120
Description
SICFET N-CH 1200V 40A HIP247
Customer Reference
Detailed Description
N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole HiP247™
Datasheet
 Datasheet
EDA/CAD Models
SCT30N120 Models
Product Attributes
Type
Description
Select All
Category
Mfr
STMicroelectronics
Series
-
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
270W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Base Product Number
SCT30
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In-Stock: 577
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Quantity
All prices are in TWD
Tube
QuantityUnit PriceExt Price
1NT$819.00000NT$819
30NT$520.56667NT$15,617
120NT$479.48333NT$57,538
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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