GT50JR22(STA1,E,S)
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GT50JR22(STA1,E,S)

DigiKey Part Number
264-GT50JR22(STA1ES)-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
GT50JR22(STA1,E,S)
Description
IGBT 600V 50A TO-3P
Manufacturer Standard Lead Time
12 Weeks
Customer Reference
Detailed Description
IGBT 600 V 50 A 230 W Through Hole TO-3P(N)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Manufacturer
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
50 A
Current - Collector Pulsed (Icm)
100 A
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 50A
Power - Max
230 W
Switching Energy
-
Input Type
Standard
Td (on/off) @ 25°C
-
Test Condition
-
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P(N)
Product Questions and Answers

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In-Stock: 14
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Quantity
All prices are in TWD
Tube
QuantityUnit PriceExt Price
1NT$211.00000NT$211
25NT$124.20000NT$3,105
100NT$103.40000NT$10,340
500NT$88.30000NT$44,150
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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