Name: GT50JR22(STA1,E,S)
Brand: Toshiba Semiconductor and Storage
SKU: 264-GT50JR22(STA1ES)-ND
Price: 257 TWD
Availability: InStock

IGBT 600 V 50 A 230 W Through Hole TO-3P(N)

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GT50JR22(STA1,E,S)
DigiKey Part Number	264-GT50JR22(STA1ES)-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	GT50JR22(STA1,E,S)
Description	IGBT 600V 50A TO-3P
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	IGBT 600 V 50 A 230 W Through Hole TO-3P(N)
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors IGBTs Single IGBTs	Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
Manufacturer Toshiba Semiconductor and Storage	Power - Max 230 W
Packaging Tube	Input Type Standard
Part Status Active	Operating Temperature 175°C (TJ)
Voltage - Collector Emitter Breakdown (Max) 600 V	Mounting Type Through Hole
Current - Collector (Ic) (Max) 50 A	Package / Case TO-3P-3, SC-65-3
Current - Collector Pulsed (Icm) 100 A	Supplier Device Package TO-3P(N)