Name: RN2101MFV,L3XHF(CT
Brand: Toshiba Semiconductor and Storage
SKU: 264-RN2101MFVL3XHF(CTTR-ND
Price: 8 TWD
Availability: InStock

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VESM

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RN2101MFV,L3XHF(CT
DigiKey Part Number	264-RN2101MFVL3XHF(CTTR-ND - Tape & Reel (TR) 264-RN2101MFVL3XHF(CT-ND - Cut Tape (CT) 264-RN2101MFVL3XHF(CTDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	RN2101MFV,L3XHF(CT
Description	TRANS PREBIAS PNP 50V 0.1A VESM
Manufacturer Standard Lead Time	52 Weeks
Customer Reference
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VESM
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistors Included	R1 and R2
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250 MHz
Power - Max	150 mW
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Package / Case	SOT-723
Supplier Device Package	VESM
Base Product Number	RN2101

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In-Stock: 7,975

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Quantity

All prices are in TWD

Tape & Reel (TR)

Quantity	Unit Price	Ext Price
8,000	NT$1.48263	NT$11,861
16,000	NT$1.34425	NT$21,508
24,000	NT$1.27371	NT$30,569
40,000	NT$1.19443	NT$47,777
56,000	NT$1.14745	NT$64,257
80,000	NT$1.10179	NT$88,143
200,000	NT$1.01694	NT$203,388