Name: TK10A80W,S4X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK10A80W,S4X-ND
Price: 129 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK10A80W,S4X
DigiKey Part Number	264-TK10A80W,S4X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK10A80W,S4X
Description	MOSFET N-CH 800V 9.5A TO220SIS
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 9.5A (Ta) 40W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet
EDA/CAD Models	TK10A80W,S4X Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	550mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id	4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	150°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK10A80