Name: TK110E65Z,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK110E65ZS1X-ND
Price: 188 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK110E65Z,S1X
DigiKey Part Number	264-TK110E65ZS1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK110E65Z,S1X
Description	650V DTMOS VI TO-220 110MOHM
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 24A (Ta) 190W (Tc) Through Hole TO-220
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	110mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2250 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	190W (Tc)
Operating Temperature	150°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3