Name: TK110E65Z,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK110E65ZS1X-ND
Price: 236 TWD
Availability: InStock

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TK110E65Z,S1X
DigiKey Part Number	264-TK110E65ZS1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK110E65Z,S1X
Description	650V DTMOS VI TO-220 110MOHM
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 24A (Ta) 190W (Tc) Through Hole TO-220
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 1.02mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Packaging Tube	Vgs (Max) ±30V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 300 V
FET Type N-Channel	Power Dissipation (Max) 190W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature 150°C
Drain to Source Voltage (Vdss) 650 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 24A (Ta)	Supplier Device Package TO-220
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-220-3
Rds On (Max) @ Id, Vgs 110mOhm @ 12A, 10V

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Tube

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TK110E65Z,S1X