Name: TK12A60W,S4VX
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK12A60W,S4VX-ND
Price: 189 TWD
Availability: OutOfStock

TK12A60W,S4VX
DigiKey Part Number	264-TK12A60W,S4VX-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK12A60W,S4VX
Description	MOSFET N-CH 600V 11.5A TO220SIS
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 11.5A (Ta) 35W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet
EDA/CAD Models	TK12A60W,S4VX Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	35W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK12A60

TK12A60W,S4VX