Name: TK190E65Z,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK190E65ZS1X-ND
Price: 136 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK190E65Z,S1X
DigiKey Part Number	264-TK190E65ZS1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK190E65Z,S1X
Description	650V DTMOS VI TO-220 190MOHM
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 15A (Ta) 130W (Tc) Through Hole TO-220
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id	4V @ 610µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	130W (Tc)
Operating Temperature	150°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3