Name: TK3R3E08QM,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK3R3E08QMS1X-ND
Price: 139 TWD
Availability: InStock

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TK3R3E08QM,S1X
DigiKey Part Number	264-TK3R3E08QMS1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK3R3E08QM,S1X
Description	UMOS10 TO-220AB 80V 3.3MOHM
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 120A (Tc) 230W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK3R3E08QM,S1X Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 3.3mOhm @ 50A, 10V
Mfr Toshiba Semiconductor and Storage	Vgs(th) (Max) @ Id 3.5V @ 1.3mA
Series U-MOSX-H	Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Packaging Tube	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 40 V
FET Type N-Channel	Power Dissipation (Max) 230W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature 175°C
Drain to Source Voltage (Vdss) 80 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 120A (Tc)	Supplier Device Package TO-220
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V	Package / Case TO-220-3

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TK3R3E08QM,S1X