Name: TK58E06N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK58E06N1S1X-ND
Price: 74 TWD
Availability: OutOfStock

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK58E06N1,S1X
DigiKey Part Number	TK58E06N1S1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK58E06N1,S1X
Description	MOSFET N-CH 60V 58A TO220
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 58A (Ta) 110W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK58E06N1,S1X Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	58A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.4mOhm @ 29A, 10V
Vgs(th) (Max) @ Id	4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3400 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	TK58E06

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