Name: TK6A65D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK6A65D(STA4QM)-ND
Price: 103 TWD
Availability: InStock

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TK6A65D(STA4,Q,M)
DigiKey Part Number	TK6A65D(STA4QM)-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK6A65D(STA4,Q,M)
Description	MOSFET N-CH 650V 6A TO220SIS
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 6A (Ta) 45W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet
EDA/CAD Models	TK6A65D(STA4,Q,M) Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 1mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Series π-MOSVII	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1050 pF @ 25 V
Part Status Active	Power Dissipation (Max) 45W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package TO-220SIS
Current - Continuous Drain (Id) @ 25°C 6A (Ta)	Package / Case TO-220-3 Full Pack
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number TK6A65
Rds On (Max) @ Id, Vgs 1.11Ohm @ 3A, 10V

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TK6A65D(STA4,Q,M)