Name: TRS4E65H,S1Q
Brand: Toshiba Semiconductor and Storage
SKU: 264-TRS4E65H,S1Q-ND
Price: 112 TWD
Availability: InStock

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TRS4E65H,S1Q
DigiKey Part Number	264-TRS4E65H,S1Q-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TRS4E65H,S1Q
Description	DIODE SIL CARBIDE 650V 4A TO220L
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	Diode 650 V 4A Through Hole TO-220-2L
Datasheet	Datasheet

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Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes	Speed Zero Recovery Time > 500mA (Io)
Mfr Toshiba Semiconductor and Storage	Reverse Recovery Time (trr) 0 ns
Packaging Tube	Current - Reverse Leakage @ Vr 55 µA @ 650 V
Part Status Active	Capacitance @ Vr, F 263pF @ 1V, 1MHz
Technology SiC (Silicon Carbide) Schottky	Mounting Type Through Hole
Voltage - DC Reverse (Vr) (Max) 650 V	Package / Case TO-220-2
Current - Average Rectified (Io) 4A	Supplier Device Package TO-220-2L
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 4 A	Operating Temperature - Junction 175°C

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TRS4E65H,S1Q