Name: TW015Z120C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: 264-TW015Z120C,S1F-ND
Price: 2836 TWD
Availability: OutOfStock

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TW015Z120C,S1F
DigiKey Part Number	264-TW015Z120C,S1F-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TW015Z120C,S1F
Description	G3 1200V SIC-MOSFET TO-247-4L 1
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 100A (Tc) 431W (Tc) Through Hole TO-247-4L(X)
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5V @ 11.7mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 158 nC @ 18 V
Packaging Tube	Vgs (Max) +25V, -10V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 431W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature 175°C
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 100A (Tc)	Supplier Device Package TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case TO-247-4
Rds On (Max) @ Id, Vgs 21mOhm @ 50A, 18V

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Tube

Quantity	Unit Price	Ext Price
1	NT$2,836.00000	NT$2,836
30	NT$2,059.36667	NT$61,781

Manufacturers Standard Package

Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

TW015Z120C,S1F