Name: IRFBE30SPBF
Brand: Vishay Siliconix
SKU: IRFBE30SPBF-ND
Price: 161 TWD
Availability: InStock

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IRFBE30SPBF
DigiKey Part Number	IRFBE30SPBF-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	IRFBE30SPBF
Description	MOSFET N-CH 800V 4.1A D2PAK
Manufacturer Standard Lead Time	37 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 4.1A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet
EDA/CAD Models	IRFBE30SPBF Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Packaging Tube	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
FET Type N-Channel	Power Dissipation (Max) 125W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 800 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)	Supplier Device Package TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V	Base Product Number IRFBE30

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Substitutes (2)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
FQB4N80TM	onsemi	823	FQB4N80TMCT-ND	NT$116.00000	Similar
STB7NK80ZT4	STMicroelectronics	2,414	497-6557-1-ND	NT$152.00000	Similar

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IRFBE30SPBF