Name: SI1062X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1062X-T1-GE3TR-ND
Price: 13 TWD
Availability: OutOfStock

SI1062X-T1-GE3
DigiKey Part Number	SI1062X-T1-GE3TR-ND - Tape & Reel (TR) SI1062X-T1-GE3CT-ND - Cut Tape (CT) SI1062X-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI1062X-T1-GE3
Description	MOSFET N-CH 20V SC89-3
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	N-Channel 20 V 530mA (Ta) 220mW (Ta) Surface Mount SC-89-3
Datasheet	Datasheet
EDA/CAD Models	SI1062X-T1-GE3 Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	420mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.7 nC @ 8 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	43 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	220mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SC-89-3
Package / Case	SC-89, SOT-490
Base Product Number	SI1062

SI1062X-T1-GE3