Name: SI2329DS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2329DS-T1-GE3TR-ND
Price: 31 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI2329DS-T1-GE3
DigiKey Part Number	SI2329DS-T1-GE3TR-ND - Tape & Reel (TR) SI2329DS-T1-GE3CT-ND - Cut Tape (CT) SI2329DS-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2329DS-T1-GE3
Description	MOSFET P-CH 8V 6A SOT23-3
Manufacturer Standard Lead Time	27 Weeks
Customer Reference
Detailed Description	P-Channel 8 V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet	Datasheet
EDA/CAD Models	SI2329DS-T1-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	30mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 4.5 V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1485 pF @ 4 V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2329