Name: SI2365EDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2365EDS-T1-GE3TR-ND
Price: 18 TWD
Availability: OutOfStock

SI2365EDS-T1-GE3
DigiKey Part Number	SI2365EDS-T1-GE3TR-ND - Tape & Reel (TR) SI2365EDS-T1-GE3CT-ND - Cut Tape (CT) SI2365EDS-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2365EDS-T1-GE3
Description	MOSFET P-CH 20V 5.9A TO236
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	P-Channel 20 V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet	Datasheet

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	32mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 8 V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2365

SI2365EDS-T1-GE3