Name: SI3460DDV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3460DDV-T1-GE3TR-ND
Price: 26 TWD
Availability: InStock

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SI3460DDV-T1-GE3
DigiKey Part Number	SI3460DDV-T1-GE3TR-ND - Tape & Reel (TR) SI3460DDV-T1-GE3CT-ND - Cut Tape (CT) SI3460DDV-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI3460DDV-T1-GE3
Description	MOSFET N-CH 20V 7.9A 6TSOP
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	N-Channel 20 V 7.9A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
Datasheet	Datasheet
EDA/CAD Models	SI3460DDV-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 1V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 18 nC @ 8 V
Series TrenchFET®	Vgs (Max) ±8V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 10 V
Part Status Active	Power Dissipation (Max) 1.7W (Ta), 2.7W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 20 V	Supplier Device Package 6-TSOP
Current - Continuous Drain (Id) @ 25°C 7.9A (Tc)	Package / Case SOT-23-6 Thin, TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V	Base Product Number SI3460
Rds On (Max) @ Id, Vgs 28mOhm @ 5.1A, 4.5V