Name: SIHB22N60ET1-GE3
Brand: Vishay Siliconix
SKU: SIHB22N60ET1-GE3TR-ND
Price: 174 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHB22N60ET1-GE3
DigiKey Part Number	SIHB22N60ET1-GE3TR-ND - Tape & Reel (TR) SIHB22N60ET1-GE3CT-ND - Cut Tape (CT) SIHB22N60ET1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHB22N60ET1-GE3
Description	MOSFET N-CH 600V 21A TO263
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Series E	Vgs (Max) ±30V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1920 pF @ 100 V
Part Status Active	Power Dissipation (Max) 227W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C 21A (Tc)	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number SIHB22
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V

Report Product Information Error

Documents & Media

Environmental & Export Classifications

Additional Resources

Substitutes (4)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
FCB199N65S3	onsemi	578	488-FCB199N65S3CT-ND	NT$186.00000	Similar
IXFA22N65X2	IXYS	4,207	238-IXFA22N65X2-ND	NT$253.00000	Similar
R6020ENJTL	Rohm Semiconductor	2,478	R6020ENJTLCT-ND	NT$145.00000	Similar
STB24N60DM2	STMicroelectronics	515	497-15423-1-ND	NT$144.00000	Similar