Name: SIHB33N60ET1-GE3
Brand: Vishay Siliconix
SKU: SIHB33N60ET1-GE3TR-ND
Price: 263 TWD
Availability: OutOfStock

SIHB33N60ET1-GE3
DigiKey Part Number	SIHB33N60ET1-GE3TR-ND - Tape & Reel (TR) SIHB33N60ET1-GE3CT-ND - Cut Tape (CT) SIHB33N60ET1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHB33N60ET1-GE3
Description	MOSFET N-CH 600V 33A TO263
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 33A (Tc) 278W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	E
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3508 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	SIHB33

Quantity	Unit Price	Ext Price
800	NT$103.34250	NT$82,674
1,600	NT$99.80813	NT$159,693

SIHB33N60ET1-GE3