Name: SIHD12N50E-GE3
Brand: Vishay Siliconix
SKU: SIHD12N50E-GE3-ND
Price: 97 TWD
Availability: InStock

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SIHD12N50E-GE3
DigiKey Part Number	SIHD12N50E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHD12N50E-GE3
Description	MOSFET N-CH 550V 10.5A DPAK
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 550 V 10.5A (Tc) 114W (Tc) Surface Mount DPAK
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Series E	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 886 pF @ 100 V
Part Status Active	Power Dissipation (Max) 114W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TA)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 550 V	Supplier Device Package DPAK
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number SIHD12
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V

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SIHD12N50E-GE3