Name: SIHG100N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG100N60E-GE3-ND
Price: 247 TWD
Availability: InStock

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SIHG100N60E-GE3
DigiKey Part Number	SIHG100N60E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHG100N60E-GE3
Description	MOSFET N-CH 600V 30A TO247AC
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 30A (Tc) 208W (Tc) Through Hole TO-247AC
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Series E	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1851 pF @ 100 V
Part Status Active	Power Dissipation (Max) 208W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package TO-247AC
Current - Continuous Drain (Id) @ 25°C 30A (Tc)	Package / Case TO-247-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number SIHG100
Rds On (Max) @ Id, Vgs 100mOhm @ 13A, 10V

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Substitutes (1)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
TSM60NE084PW C0G	Taiwan Semiconductor Corporation	265	1801-TSM60NE084PWC0G-ND	NT$389.00000	Similar

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SIHG100N60E-GE3