SIHG80N60E-GE3 is out of stock and can be placed on backorder.
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N-Channel 600 V 80A (Tc) 520W (Tc) Through Hole TO-247AC
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHG80N60E-GE3

DigiKey Part Number
SIHG80N60E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHG80N60E-GE3
Description
MOSFET N-CH 600V 80A TO247AC
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 80A (Tc) 520W (Tc) Through Hole TO-247AC
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
443 nC @ 10 V
Series
Vgs (Max)
±30V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
6900 pF @ 100 V
Part Status
Active
Power Dissipation (Max)
520W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
600 V
Supplier Device Package
TO-247AC
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
30mOhm @ 40A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (5)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IXFX100N65X2IXYS405238-IXFX100N65X2-NDNT$753.00000Similar
STW88N65M5STMicroelectronics688497-12116-NDNT$621.00000Similar
STWA88N65M5STMicroelectronics540497-13793-5-NDNT$594.00000Similar
TSM60NE048PW C0GTaiwan Semiconductor Corporation3001801-TSM60NE048PWC0G-NDNT$559.00000Similar
TSM60NE069PW C0GTaiwan Semiconductor Corporation2951801-TSM60NE069PWC0G-NDNT$441.00000Similar
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Tube
QuantityUnit PriceExt Price
1NT$518.00000NT$518
25NT$321.44000NT$8,036
100NT$274.76000NT$27,476
500NT$243.94600NT$121,973
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.