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SIHP23N60E-GE3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP24N65E-GE3

DigiKey Part Number
SIHP24N65E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP24N65E-GE3
Description
MOSFET N-CH 650V 24A TO220AB
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 24A (Tc) 250W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SIHP24N65E-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2740 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
Product Questions and Answers

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0 In Stock
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All prices are in TWD
Tube
QuantityUnit PriceExt Price
1NT$206.00000NT$206
10NT$146.10000NT$1,461
100NT$118.18000NT$11,818
500NT$108.17400NT$54,087
1,000NT$82.84600NT$82,846
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.