Name: SIS890DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS890DN-T1-GE3TR-ND
Price: 75 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIS890DN-T1-GE3
DigiKey Part Number	SIS890DN-T1-GE3TR-ND - Tape & Reel (TR) SIS890DN-T1-GE3CT-ND - Cut Tape (CT) SIS890DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIS890DN-T1-GE3
Description	MOSFET N-CH 100V 30A PPAK1212-8
Manufacturer Standard Lead Time	42 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet	Datasheet
EDA/CAD Models	SIS890DN-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 802 pF @ 50 V
Part Status Active	Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 100 V	Supplier Device Package PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C 30A (Tc)	Package / Case PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SIS890
Rds On (Max) @ Id, Vgs 23.5mOhm @ 10A, 10V